Controlled-geometry cavities were introduced into the m{10 (1) over bar0} plane of undoped sapphire substrates using photolithographic methods, and subsequently internalized by diffusion bonding the etched sapphire to an undoped high-purity polycrystalline alumina. Pore-boundary separation during growth of the sapphire seed into the polycrystal entrapped the pores within the single crystal. Pores with an equivalent spherical radius of approximate to1 mum reached a quasi-equilibrium shape after prolonged anneals at 1600degrees and 1800degreesC. The introduction of mechanically induced surface defects accelerated pore shape equilibration. The Wulff shape of undoped alumina was determined by characterizing the shape and facet structure of these equilibrated internal pores using optical microscopy, scanning electron microscopy, and atomic force microscopy. The observed planes in the Wulff shape of undoped alumina, c(0001), r{(1) over bar 012}, s{1 (1) over bar 01}, a{11 (2) over bar0}, and p{11 (2) over bar3} planes, were consistent with those reported by Choi et aL; however, a different energy sequence is inferred. The absence of the m-plane in the Wulff shape is consistent with other experimental studies, but inconsistent with those lattice simulations that predict the m-plane to be one of the lowest energy planes in pure alumina. A comparison of Wulff shapes at 1600degrees and 1800degreesC suggests that the surface energy of undoped alumina becomes more isotropic as temperature increases.