Thin films of Pb(Zr0.4Ti0.6)O-3 produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature (T-C). Films on Al2O3 were under minimal stress at T-C, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the <001> direction demonstrated lower dielectric constants and higher P-r and -d(31), values than (111) films.