An ultrasonic guided wave scan system was used to non-destructively monitor damage over time and position in a C/enhanced SiC sample that was creep tested to failure at 1200 degrees C in air at a stress of 69 MPa (10 ksi). The use of the guided wave scan system for mapping evolving oxidation profiles (via porosity gradients resulting from oxidation) along the sample length and predicting failure location was explored. The creep-rupture tests were interrupted for ultrasonic evaluation every two hours until failure at similar to 17.5 cumulative hours.