Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition (CVD). Subsequently, the films were implanted with 120 keV H+ to dose of 5 x 10(14) similar to 5 x 10(16) cm(-2). After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is thought that the formation of H-B pairs plays an important pole in property changes. However, the electrical resistance of DF is influenced by both implantation dose and annealing. Secondary ion mass spectroscopy (SIMS) results show that B atoms have uncommon profiles after H+ implantation and annealing. This phenomenon, maybe, has the potential for application in designing the DF device.