Materials Chemistry and Physics, Vol.64, No.3, 179-183, 2000
Experimental determination of induction period and interfacial energies of pure and nitro doped 4-hydroxyacetophenone single crystals
Single crystals of pure and nitro doped 4-hydroxyacetophenone were grown by low temperature solution growth technique. The induction periods were measured at various supersaturations for these materials and hence the interfacial energies were evaluated. The effect of doping of a nitro group in the material enhances the NLO property. The experimentally evaluated values of interfacial energies are found to be in good agreement with theoretically predicated values.
Keywords:solution growth technique;4-hydroxyacetophenone;induction period;interfacial energy;nucleation parameters;NLO property