Semiconducting oxide glasses in the Fe2O3-MgO-TeO2 system are fabricated by a press-quenching of glass melts using Fe2O3, Mg, and TeO2 raw materials and the de conduction is investigated. The glass formation region represented by batch composition is determined as follows: Fe2O3=0-20; Mg=0-40; and TeO2=55-100 mol%. The glasses are n-type semiconducting. The de conductivity gives 1.1 x 10(-5) to 1.3 x 10(-4) S cm(-1) at 548 K for different glass compositions. The conductivity increases with increasing Fe2O3 and Mg contents. A redox model in the glass melt is proposed, which makes possible to explain the fraction of reduced transition metal ion C for different compositions. The conduction is attributed to non-adiabatic hopping of small polarons. The small polaron coupling constant y(p) is evaluated to be 21-33. For varying glass compositions hopping mobility and carrier density are estimated to be (1.1-5.8)x10(-6) cm(2) V-1 s(-1) and 4.8 x 10(19)-1.5x 10(20) cm(-3) at 548 K, respectively.