An extremely simple and cheap method for deposition of the n-CdTe thin films is presented. Goad quality deposits are obtained at 75 degrees C, 10+/-0.5 pH, and deposition time equal to 90 min. Light grey coloured and uniform CdTe layers of approximately 0.3 mu m thick are obtained by this process. The compositional analyses showed that the baked CdTe films are little bit Cd-rich. The as-deposited CdTe layers are crystalline with a mixture of the hexagonal and cubic structures. The microscopic observations show some overgrowth on the grown spherical type crystallites which improve after baking at 100 degrees C. Optical studies revealed a high absorption coefficient (10(4) cm(-1)) with a direct gap of 1.45 eV. The films are of the n-type conduction with a room temperature electrical resistivity of 10(6) Omega cm. The activation energies of an electrical conduction have been determined and the possible conduction mechanism is discussed.