Materials Chemistry and Physics, Vol.66, No.2-3, 172-176, 2000
Growth process analysis of a-Si1-xNx : H films probed by X-ray reflectivity
Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys deposited by ultra high vacuum plasma-enhanced chemical vapor deposition (PECVD) have been characterized by X-ray reflectivity (XRR) measurements in order to investigate their structural properties. From the analysis of XRR data, the thickness, density, interface and surface roughness of the films have been evaluated.
Keywords:X-ray reflectivity (XRR);plasma-enhanced chemical vapor deposition (PECVD);silicon nitride;alloys;light-emitting devices (LED)