Thin films of p-SnS were cathodically electrodeposited on tin oxide conducting glass substrates from aqueous solution containing SnCl2 and Na2S2O3. The mechanism of electrochemical co-deposition of tin and sulphur is investigated by cyclic voltammetry. Deposits have been characterised with X-ray diffractograms,, microstructure analysis, chemical analysis, optical and electrical measurements. The films were found to be polycrystalline with an optical. energy gap of 1.15eV. Mott-Schottky plot has been drawn tin the dark condition) to evaluate the semiconductor parameters. A photoelectrochemical cell with the configuration of p-SnSIFe3+, Fe2+IPt yielded a short-circuit current density of 0.65 mA cm(-2), an open-circuit voltage of 320 mV under 100 mW cm(-2) illumination.