Bi2Se3 thin films have been deposited by simple and less investigated successive ionic layer adsorption and reaction (SILAR) technique onto fluorine-doped tin oxide (FTO) coated glass substrates at room temperature (27degreesC). The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies indicate that Bi2Se3 thin films are nanocrystalline. These films are used for photoelectrochemical (PEC) characterization in cell with configuration as n-Bi2Se3/0.1 M polysulfide/C. The studies such as current-voltage characteristics in dark and light, photovoltaic power output, transient photoresponse, and capacitance-voltage have been carried out. The study reveals that fill factor and power conversion efficiency of the cell are low (0.43 and 0.032%, respectively). The flat bond potential is found to be -0.04 V (SCE). (C) 2002 Elsevier Science B.V. All rights reserved.