Samarium-doped Bi4Ti3O12 (Bi3.15Sm0.85Ti3O12) thin films have been prepared on SiO2/p-Si(1 1 1) substrate by spin coating metalorganic solution decomposition method. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscopy. The films exhibit excellent insulating properties and resistance to breakdown. The clockwise hysteresis curve shows that the films are polarization-type switching and the memory window is about 1.2 V. The dielectric constant and dissipation factor at a frequency of 100 kHz are 100 and 0.15, respectively. (C) 2004 Elsevier B.V. All rights reserved.