Photoluminescence measurements on manganese indium sulphide thin films were carried out and the temperature dependence of the PI emission band was studied. A Gaussian shaped PI band centered at 535 nm was observed at 10K. A study on the variation of InCl3 concentration in spray solution over the PI energy band position and shape suggests that varying InCl3 concentration in the solution or by changing the In3+ composition in the film during growth does not affect PI maxima position on energy axis whereas a reduction in the PI peak intensity was noticed with decreasing InCl3 solution concentration. Based on the luminescence data donor level height in the manganese indium sulphide energy gap was estimated and found to be around 20meV; that again on reduction in InCl3 concentration in solution found to decreases marginally. (c) 2005 Published by Elsevier B.V.