화학공학소재연구정보센터
Materials Chemistry and Physics, Vol.97, No.2-3, 256-260, 2006
Dielectric properties of copper oxide doped 0.95Ba(Zn1/3Ta2/3)O-3-0.05BaZrO(3) ceramics at microwave frequency
The microwave dielectric properties of conventional solid state route prepared 0.95Ba(Zn1/3Ta2/3)03-0.05BaZrO(3) ceramics with CuO addition have been investigated. Ordering structure was not observed at sintering temperatures 1280-1430 degrees C. Copper oxide, as a sintering aid, was found to effectively lower the sintering temperature of 0.95Ba(Zn1/3Ta2/3)O-3-0.05BaZrO(3) ceramics. The Q x f values of 58000-93000 (at 7GHz) can be obtained when the sintering temperatures are in the range of 1280-1430 degrees C. The permittivity (epsilon(r)) as well as the temperature coefficient of resonant frequency rf was strongly correlated to the CuO content but independent of the sintering temperature. The epsilon(r) value of 29.6, Q x f value of 9 000 (at 7 GHz) and tau(f) value of 3.1 ppm degrees C-1 were obtained for 0.95Ba(Zn1/3Ta2/3)O-3-0.05BaZrO(3) ceramics with 1 wt.% CuO addition sintered at 1430 degrees C for 4h. For applications of high selective microwave ceramic resonator and filter, 0.95Ba(Zn1/3Ta2/3)O-3-0.05BaZrO(3) is proposed as a suitable material candidate. (c) 2005 Published by Elsevier B.V.