Zn3Nb2O8 has been considered as candidate microwave materials due to its high quality factor. However, Zn3Nb2O8 has to be sintered above 1200 degrees C. We have lowered Zn3Nb2O8 sintering temperature to 950 degrees C by using 3 wt.% of BC additives (0.29BaCO(3)-0.71 CuO). The doped Zn3Nb2O8 exhibits good microwave properties at 8.3 GHz (k = 14.7, Q x f = 8200 GHz). The interfacial behavior between Zn3Nb2O8 dielectric and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. No new crystalline phase and no silver migration behavior were found after cofiring doped Zn3Nb2O8 and silver electrode at 950 degrees C for 4h. The low sintering temperature BC doped Zn3Nb2O8 with high Q x f value has a potential for microwave applications. (c) 2005 Elsevier B.V. All rights reserved.