Using CH3SiCl3 (NITS) and H as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal beta-SiC structure, with diameters of about 70 nm. As the increasing of deposition temperature, or as the decreasing of H-2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. beta-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires. (c) 2005 Elsevier B.V. All rights reserved.