We present a study on the growth of Be-doped InGaP layers lattice matched to GaAs substrates by chemical beam epitaxy. We show that the presence of the dopant affects not only electrical but the structural properties - crystal quality and morphology - as well. For samples grown at higher temperatures, a saturation of the electrical carrier concentration is observed, associated to degradation of surface morphology and crystal quality. Our results suggest that at these higher temperatures the excess of Be atoms - which are not electrically active - are incorporated as microcrystals of Be3P2 which may give rise to defects in the layers. Reducing the growth temperature can alter this scenario, resulting in Be-doped InGaP layers with improved crystal quality, planar morphology and no saturation in the electrical carrier concentration for Be concentrations up to 3 x 10(19) cm(-3).