A 28 mm in length and 15 mm in diameter single-crystalline InxGa1-xAs ternary bulk crystal was grown on GaAs seed crystal using the multi-component zone melting method. The InAs composition of the grown crystal was gradually increased from 0.04 at the initial growth interface to 0.33 by decreasing the growth temperature as in the vertical gradient freeze method during growth of 24 mm length, and then maintained at 0.34 +/- 0.01 for the following growth of 4 mm length by making the sample travel at a rate nearly equal to the growth rate without lowering the furnace temperature. This combination of temperature and sample traveling rate control enabled the growth of homogeneous In0.3Ga0.7As ternary bulk crystal.