We report a method to produce large area indium antimonide thin films through a reaction in solid state between thin films of Sb2S3 and In (Sb2S3 + 2 In --> 2 InSb + 3 S up arrow). A thin him of Sb2S3 with typically 0.2. mu m thickness is produced on glass substrate by chemical bath deposition at 10 degrees C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb2S3 film by thermal evaporation. Annealing the thin film stack of Sb2S3-In at 300 degrees C under nitrogen atmosphere produces the InSb thin film. The formation of this him is confirmed by X-ray diffraction studies. We discuss the optimization of the individual film thickness in the Sb2S3-In stack to produce a thin film of single-phase InSb or a heterostructure, Sb2S3-InSb. The electrical and optical properties of the films are presented.