Journal of Crystal Growth, Vol.208, No.1-4, 365-369, 2000
Growing high-quality C-60 films by using Sb buffer layer
The structure and growth morphologies of C-60 films, prepared by pre-depositing a layer of surfactant Sb over NaCl(0 0 1) substrates with vacuum vapor deposition method, were studied by a transmission electron microscope. It was found that the structure and growth behavior of C-60 films is significantly affected by Sb and the substrate temperatures. The thickness of pre-deposited Sb film has a great effect on the quality of C-60 films, and the optimal thickness for high-quality C-60 film growth is about 0.5 nm, (1 1 1) oriented C-60 single-crystal films with large C-60 crystal grains were obtained when the substrate temperatures were kept at 170 and 185 degrees C, respectively. Possible growth mechanisms of the Sb-buffered C-60 films are proposed.