Ternary Al1-xInxN films of various compositions were grown by atmospheric pressure metalorganic vapor-phase epitaxy. The films were structurally characterized by X-ray diffraction and atomic force microscopy. Although the crystallinity of Al1-xInxN grown directly on a sapphire substrate was quite low, in the case of Al1-xInxN grown on sapphire using a low-temperature-deposited AIN buffer layer, the crystallinity was a little higher. Moreover, when Al1-xInxN was grown on a high-quality GaN layer which was grown on sapphire with a low-temperature-deposited AlN buffer layer, the crystallinity became much better. In addition, in this case, Al0.83In0.17N, which is lattice-matched to GaN, had the highest crystallinity among Al1-xInxN samples of various compositions. It was found that a high-quality GaN substrate and lattice matching are essential for the growth of high-quality Al1-xInxN.