The growth conditions of ZnSe single crystals were investigated by chemical vapor transport (CVT) and physical vapor transport (PVT) methods. The growth temperatures were about 850 degrees C (CVT) and 1100 degrees C (PVT). Single crystals of 18-20 mm diameter. 30 mm long and orange colored were grown. The homogeneity of crystals was measured. The etch pit density of good crystals is in the range of (1-4) x 10(4) cm(-2) full-width at half-maximum (FWHM) of (0 0 4) X-ray double crystal rocking curve is 17 arcsec. These data indicate that the crystals have good homogeneity and no twin crystal boundaries.