Effect of substrate rotation on inter-surface diffusion between (0 0 1) and (1 1 1)B of GaAs(0 0 1) patterned substrates in MBE was studied. Growth on the (1 1 1)B facet was eliminated when rotation speed was high, while the growth occurred at lower rotation speed. These phenomena indicate that, the onset of the growth on (1 1 1)B is determined by whether the amount of Ga adatoms on the surface is sufficient to start 2D-nucleation. We show that 2D-nucleation can be suppressed by rotating the substrate since the adatom concentration on (1 1 1)B is decreased to below the critical value for the nucleation.