The CTR scattering around the 1 1 1 Bragg point was observed from two kinds of SOI wafers, SIMOX and UNIBOND(R) wafers. The intensity profile of the CTR scattering from the UNIBOND wafer showed that the top Si layer had a good crystal quality and its interfaces were very flat. The profile from the SIMOX wafer consisted of sharp and broad components, indicating that the crystalline quality around the interfaces were poor for both the top Si layer and the substrate. It was also influenced by an ordered SiO2 in the buried oxide layer.