Galvanomagnetic effects (B less than or equal to 0.1 T, 4.2 less than or equal to T less than or equal to 300 K) in n-Pb1-xGexTe (0.04 less than or equal to x less than or equal to 0.08) alloys doped with gallium (1.5-3 at%) have been investigated as well as before and after the irradiation with fast electrons (T approximate to 300 K, E = 6 MeV, Phi less than or equal to 2.4 x 10(16) cm(-2)). Low-temperature activation range on temperature dependencies of the resistivity and the Hall constant has been revealed in the alloys with low initial gallium concentration. Increasing in the gallium content as well as fast-electron irradiation lead to the transition to the metal-type conductivity in the samples. The results were explained under assumption that gallium doping induced the appearance of deep impurity level in the gap of the alloys. The position of the gallium level in depending on the alloy composition was determined.