We have studied the epitaxial growth of AIN layers by plasma-assisted molecular beam epitaxy (MBE) on GH-SIC substrate. Reflection high-energy electron diffraction (RHEED) was used to monitor the growth by the observation of the 2D-3D growth transition, respectively, in Al-and N-rich conditions. Special attention was given to the elimination of the Al droplets which often form in Al-rich conditions. Different growth procedures are proposed to avoid the appearance of these droplets while keeping a 2D growth. Each of the procedure gives AIN epilayers with identical crystalline quality and low surface roughness as measured, respectively, by X-ray diffraction and atomic force microscopy.