With the recognition of the importance of the structural perfection of GaN films for highest performance devices, the growth of GaN bulk crystals or thick GaN layers to he used as substrates as well as high-quality epitaxial layers is considered with increased interest. The different approaches are discussed. GaN films were grown by liquid-phase epitaxy (LPE) on (0 0 0 1)sapphire, on (0 0 1)LiGaO2, on (1 0 0)LiAlO2, and on vapor-grown GaN seed films from Ga(1) at 900 degrees C.