Journal of Crystal Growth, Vol.211, No.1-4, 202-206, 2000
Process modeling of the industrial VGF growth process using the software package CrysVUN plus
The results of quasi-steady simulations of an industrial VGF process for the growth of GaAs crystals are compared to the results of time-dependent (transient) calculations and experimental growth data. It shows that for the relatively low growth rate of 2.5 mm/h the VGF process can be regarded as a sequence of quasi-steady growth steps.