A 6 cm in diameter Ga-doped Ge0.98Si0.02 crystal was grown using the vertical Bridgman method with a submerged baffle. After 3 cm of growth, the baffle was removed and the solidification continued in conventional Bridgman configuration. The composition of Si and Ge was measured using electron probe micro-analysis (EPMA). The micro-structure pattern was revealed by etching. The advantages of using the baffle for growth of Si-Ge alloys is discussed.