We proposed a concise and novel scheme to determine the crystallographic misorientation of heteroepitaxial structures. In addition to subtle high-resolution transmission electron microscopy images, the information revealed from selected-area diffraction patterns at the interfaces offers another path to determine the angles of misorientations. The principle is to extract the basically three-dimensional misorientation information from a two-dimensional selected-area diffraction patterns through the employment of the Laue circle.