On the II-VI-bascd diluted magnetic semiconductor ZnMnTe heavily p-doped with N, in situ reflectance difference spectroscopy (RDS) was performed during and upon the epitaxial growth. It was possible to observe below and in the band-gap region features occurring from intra-Mn d-level transitions. In undoped materials the spectroscopic window for observation may open only for high values of magnetic ions concentration, whereas in doped crystals it was possible to detect the transitions at growth temperature and at Mn concentrations as low as 2%.