Journal of Crystal Growth, Vol.214, 220-224, 2000
Photoluminescence characterization of MBE-grown ZnTexSe1-x epitaxial layers with. high Te concentrations
Photoluminescence properties in ZnTexSe1-x mixed crystal layers grown by molecular-beam epitaxy (MBE) have been investigated by means of the composition (x) dependence, temperature dependence and time-resolved luminescence measurements. A strong Te-related emission is dominant at room temperature in the samples up to x = 0.3. The temperature dependence of the emission spectra and the time-resolved luminescence results support that a green emission band observed in a ZnTe0.09Se0.91S0.91 epilayer is ascribed to usual Te-related self-trapping exciton recombination.