In this work, MBE-grown quasi-pseudomorphic Fe-doped HgSe layers are investigated by X-ray diffraction and Raman spectroscopy. The crystal quality and the strain state of the epilayers are determined by X-ray diffraction measurements. Raman scattering spectra obtained for the layers are very similar to those taken for the bulk, Fe-doped HgSe samples. The observation of a small frequency shift of the TO-phonon structure on various layers confirms the presence of the strain effects.