The luminescence of Tm3+ in p-type ZnS and of Er3+ in p-type ZnSe crystals have been investigated. The doping with rare-earth elements (REE) was performed by means of ion implantation in n-type materials. The post-implantation annealing of the radiation damages was performed in the atomic flux of VI group elements. The interaction of such a flux with the treated crystal leads also to the inversion of the conductivity of these semiconductors to p-type. It was found that in both cases REE occupy zinc sites. The interpretation of the corresponding luminescence lines has been given.