The first phosphor-free white LED based on II-IV compound materials is demonstrated. Our device utilizes a phenomenon unique to ZnSe homoepitaxy, where a portion of the main greenish-blue emission from the active layer of a pn junction diode is absorbed by the conductive substrate which in turn gives off an intense broad-band yellow emission centered around 585 nm by photoluminescence. These two emission bands combine to give a spectrum which appears while to the naked eye. A typical ZnSe-based white LED lamp exhibits a color temperature of approximately 3400 K with a CRI (color rendering index) of 68. The optical output power and operating voltage of such a device at a forward current of 20 mA is 2.0 mW and 2.7 V, respectively. The luminous efficiency estimated from these results is 10.41 m/W, which is comparable to the incandescent lamp as well as the commercial InGaN-based white LED. Device lifetimes (half-life) have exceeded 800 h at 20 degrees C.