The MOVPE growth of blue-emitting devices based on ZnSe is mainly hindered by the lack of sufficient p-type doping. We have used the Sb precursor trisdimethylaminoantimony (TDMASb) for antimony doping of ZnSe in our MOVPE growth process. ZnSe:Sb layers showing p-type conductivity as well as ZnSe:Sb/ZnSe:Cl p-n junction diodes were deposited on p-type GaAs:Zn substrates. The diode structures show blue electroluminescence under forward bias. Photoluminescence at T-PL = 16 It and electroluminescence in the temperature range of T-EL = 16-300 K were measured.