The hot-wall-epitaxy (HWE) technique was used to deposit Bi2Te3 thin films on amorphous (kapton and SiO2) substrates. It was found that the growth proceeds under low supersaturation (2.5%) in the direction perpendicular to the basal plane of the hexagonal unit cell of Bi2Te3. Elementary spirals having a regular shape of hexagonal symmetry, reflecting the crystalline structure of Bi2Te3. were clearly assessed by using an atomic force microscope (AFM). The height of the steps constituting these spirals was estimated to be 1 nm, corresponding to one unit cell, with an inter-step separation ranging from 180 to 200 nm. The growth mechanism and the final morphology of the films were explained in the light of the Burton-Cabrera-Frank (BCF) and the periodic-bond-chains (PBC) models. The size of the critical radius of nucleation and the edge surface free energy were estimated to be R* = 10.5 nm and gamma = 560 erg/cm(2), respectively. In addition. the modulus of the Burger's vector was calculated to be \b\ approximate to I nm. These values are in good agreement with the theoretical ones, which permits the explanation of the final morphology of the films.