A new gaseous mixture containing n-propylamine, trimethylgallium (TMG) and ammonia was used to deposit gallium nitride films. Pure and transparent, polycrystalline films were obtained and analysed by scanning electron microscopy (SEM) and Raman spectroscopy. n-Propylamine has an important influence on the crystal structure of the resulting gallium nitride deposits, and the presence of n-propylamine in the reaction system thus provides a new solution for deposition of high-quality gallium nitride films.