The lattice misfit strain and relaxation during growth of 60-950 Angstrom epitaxial TiC carbide films deposited by coevaporation of C-60 and Ti on MgO(001) have been studied by reciprocal space mapping (RSM) and transmission electron microscopy (TEM). All the films exhibited a strained layer growth behavior with respect to the substrate. The strain epsilon, ranged from 2.1% for the 60 Angstrom film to 0.8% for the 950 Angstrom film. Initial misfit strain relaxation was by slip on {110}(101) and {111}(101). After dislocation rearrangement the films predominantly exhibited well-developed misfit dislocations of edge type with line direction (100) along the interface plane and Burgers vectors 1/2[101] inclined to the interface with MgO.