화학공학소재연구정보센터
Journal of Crystal Growth, Vol.221, 196-200, 2000
Wavelength control of arrayed waveguide by MOVPE selective area growth
We report the wavelength control of the arrayed waveguide using MOVPE selective area growth. The asymmetric mask pattern, which placed the wide mask next to the one-side-arrayed waveguide, resulted in the gradient change of the bandgap wavelength in array waveguides. The wavelength in each waveguide was found to be linearly changed and clearly dependent on the wide mask width W-w. A 100nm photoluminescence peak wavelength shift in the arrayed waveguide was achieved for a 50 mum asymmetric mask pattern, while maintaining linearly shifted profiles.