GaN layer is grown by remote-plasma-enhanced organometallic vapor-phase epitaxy and the effect of N/III ratio on the growth rate, surface morphology, and the optical properties is investigated. The microwave power dependence of the growth rate and reflection high-energy electron diffraction measurement confirms that the growing surface becomes Ga-rich at lower power region. Both the surface morphology and the optical quality can be improved by using the slightly Ga-rich growth condition. Strong near-band-edge FL, which is comparable to that grown by conventional OMVPE using NH3 at 1050 degreesC, is obtained by means of remote-plasma-enhanced OMVPE at 800 degreesC.