High-quality ZnO films were successfully prepared by atmospheric pressure CVD using zinc acetylacetonate (Zn(C5H7O2)(2)) and oxygen as sources. Epitaxial growth was achieved on (0112)-oriented single-crystal sapphire substrates, The crystal quality of ZnO films was highly dependent on the film thickness, and crystallinity was improved remarkably at thicknesses over 0.32 mum. The cathodoluminescence spectra of the films had a strong peak of band-edge emission at 379 nm and the so-called green emission at visible region was very weak.