GaInNAs/GaAs quantum dot (QD) structure is expected to be one of the novel materials to extend the emission wavelength of GaAs-based lasers. In this work, we have grown GaInNAs QDs by chemical beam epitaxy (CBE) with nitrogen radicals for the first time. The effect of nitrogen (N) introduction to the QD formation was investigated. We found that the dot density and size were strongly influenced by the supplied N quantity for the N composition up to 1.5%. The maximum dot density of 1.2 x 10(11) cm(-2) was obtained at 1% of N composition. A photoluminescence (PL) from GaInNAs QDs was obtained at room temperature (RT) with a peak wavelength of 1.1 mum. The peak wavelength was slightly red-shifted in comparison with GaInAs QDs grown under the same condition except N introduction. This result is considered as the reduction of the band gap by the N introduction. The first lasing operation was also obtained from a GaInNAs QDs laser under pulsed condition at 77 K.