Electron field emission (FE) from high-quality AIN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5 x 10(20) cm(-3)) high-quality AIN were as low as 91 and 94 arcsec, respectively. The heavily Si-doped AlN showed a maximum FE current of 347 muA and its density was 11 mA/cm(2) Field emission enhancement as a result of Si doping can be explained by hopping conduction through a Si impurity level. White, red, green, blue light emission (luminance: about 1200 cd/m(2)) from phosphors excited by the field-emitted electrons was observed.