In this paper, we report on the use of in situ AsCl3 etching to suppress the indium-enriched layer formed at the InGaAs quantum well (QW) surfaces which is well known to result from In segregation mechanism. The effects of such an etching step performed at the GaAs on InGaAs QW interface have been assessed by secondary ion mass spectrometry (SIMS) and low-temperature photoluminescence spectroscopy (PL). Both SIMS and PL data clearly show that there is no degradation of the material quality. Moreover, these data are well accounted for by considering that the etching step has eliminated the In segregated layer at the InGaAs surface.