Low dark current (210 nA/cm(2) at -1 V), high shunt resistance area product (0.3 M Omega cm(2)) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was deposited by organometallic vapor-phase epitaxy upon sulfur-doped InP substrates. High-quality surface appearance and good uniformity of X-ray and photoluminescence intensity and wavelength were observed. Over 360 linear arrays of 256 or 512-element devices can be obtained from these 100mm diameter wafers and represent more than a four-fold yield increase over that obtained with current industry standard of 50 mm diameter wafers. Good results from 320 x 240 element InGaAs/InP focal plane arrays fabricated on 75 mm diameter substrates were also obtained.