Journal of Crystal Growth, Vol.222, No.4, 701-705, 2001
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
In this priority communication it will be shown that InN thin films can be successfully grown using the metalorganic molecular beam epitaxy (MOMBE) method. For the first time the proper choice of growth conditions allows to obtain good quality InN thin films with a charge carrier concentration as low as 8.8 x 10(18)cm(-3).