We examine, both experimentally and theoretically, the feasibility of positioning and sizing self-assembled InAs quantum dots on a variety of patterned InP templates. Such templates are fabricated using either chemically assisted ion beam etching or selective oxide patterning, and subsequent chemical beam epitaxial overgrowth. For templates of trapezoidal cross-section, we demonstrate experimentally how quantum dot formation can be localised on the top (0 0 1) surface of the structure. For templates of triangular cross-section, in which the (0 0 1) top surface has been eliminated and strained quantum wells have been embedded, we use finite element modeling of the stress distribution and elastic strain energy to examine the positioning and sizing of self-assembled InAs quantum dots on the sidewalls. We show that dots can be located near the intersection of the quantum well stressors with the template sidewalls, whilst the lateral dot dimension is influenced by the extent of the local strain distribution. Crown Copyright