We report a method to produce CuSbS2 thin films through a solid state reaction at 400 degreesC involving thin films of Sb2S3 (0.5 mum) and CuS. The precursor thin films were produced by chemical bath deposition on glass substrates, Thin films of Sb2S3 were deposited at 10 degreesC using thiosulfatoantimonate(III) complex. Subsequently, thin films of CuS were deposited onto these films from a bath containing thiosulfato complex of copper and dimethylthiourea. The formation of the ternary compound upon annealing the Sb2S3-CuS films was confirmed by X-ray diffraction. The estimated grain diameter of the material formed is about 20 nm. A direct optical band gap of 1.52 eV and a p-type electrical conductivity of 0.03 Omega (-1) cm(-1) are evidenced. CuSbS2 is a material investigated for ferroelectric properties (Curie temperature 93 degreesC). The characteristics reported here also offer perspective for CuSbS2 as an absorber material in solar cell application.