화학공학소재연구정보센터
Journal of Crystal Growth, Vol.225, No.2-4, 141-144, 2001
Thermodynamics and nucleation kinetics of AlxGa1-xN/GaN and InxGa1-xN/GaN heterostructures
The initial stage of growth of group III-Nitride ternary compounds on binary substrate were analysed using the classical nucleation theory, incorporating the stress induced supercooling due to lattice mismatch between the grown alloy and substrate. The explicit expression for the growth of the chosen system was established and it was used to evaluate the nucleation parameters. It has been theoretically shown that the nucleation barrier for the formation of ternary alloy on binary substrate depends on the composition of the alloy.