The growth of epitaxial zinc-blende BxGa1-xAs and BxGa1-x-yInyAs alloys using diborane is complicated by a thermodynamic miscibility gap and complex gas-phase chemistry. We have characterized the growth behavior of these alloys when they are grown using trimethylgallium (TMG), triethylgallium (TEG), trimethylindium (TMI), and arsine by low-pressure and atmospheric-pressure metal-organic chemical-vapor-deposition. Boron incorporation into BxGa1-xAs exhibits qualitatively different behavior using TEG and TMG, but the incorporation efficiency and maximum achievable boron concentration decrease dramatically at growth temperatures greater than 600 degreesC using either Ga source.